Engineered substrate
US11430910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2017 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Feb 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.