Germanium hump reduction
US11437245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.