Patent · US Active

Showerhead device for semiconductor processing system

US11437249B2 · kind B2 · utility

2Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 16, 2020
Grant dateSep 6, 2022
Priority date
Expiry dateJul 16, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3065
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.