Semiconductor device with T-shaped buried gate electrode and method for forming the same

US11437481B2 · kind B2 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Ching-Chia Huang · Taipei, TW
• Tseng-Fu Lu · New Taipei, TW

Key dates

• Filing date: Jun 30, 2020
• Grant date: Sep 6, 2022
• Expiry date: Jun 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

The present disclosure provides a semiconductor device with a T-shaped buried gate electrode and a method for forming the semiconductor device. The semiconductor device includes a semiconductor substrate having an active region, and a first gate electrode disposed in the semiconductor substrate. The semiconductor device also includes a first source/drain region and a second source/drain region disposed in the active region and at opposite sides of the first gate electrode. The first gate electrode has a first portion extending across the active region and a second portion extending into the first source/drain region.