Split-gate MOSFET with gate shield
US11437488B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 24, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Nov 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are methods for forming split-gate MOSFETs including a gate shield. In some embodiments, a method may include providing a device structure including a well formed in an epitaxial layer, forming a set of trenches through the well and the epitaxial layer, implanting the device structure to form a gate shield layer at a bottom of each of the set of trenches, and forming a gate spacer layer over the device structure including within the set of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.