David J. Lee
7Patents
0h-index
15Co-inventors
31Inventor score
Filing activity: Nov 24, 2020 → Oct 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11798982B2 | Self-aligned trench MOSFET | Electricity | 0 | Active |
| US12046473B2 | Backside wafer dopant activation | Electricity | 0 | Active |
| US12412789B2 | Endpoint optimization for semiconductor processes | Electricity | 0 | Active |
| US11695060B2 | Ion implantation to form trench-bottom oxide of MOSFET | Electricity | 0 | Active |
| US11437488B2 | Split-gate MOSFET with gate shield | Electricity | 0 | Active |
| US11387338B1 | Methods for forming planar metal-oxide-semiconductor field-effect transistors | Electricity | 0 | Active |
| US11527412B2 | Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.