Patent · US Active

Chamber components for epitaxial growth apparatus

US11441236B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 22, 2016
Grant dateSep 13, 2022
Priority date—
Expiry dateJul 24, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0262
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.