Memory and operation method of memory
US11442810B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2021 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | May 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M13/616
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A memory includes: a memory core including sequentially disposed N data cell regions and an ECC cell region respectively suitable for storing N data pieces of K bits and a corresponding ECC of M bits; and an error correction circuitry suitable for generating the ECC based on the data pieces and error-correcting the data pieces based on the ECC, through a check matrix configured by a message part of a [M×(K*N)] bit-dimension and an ECC part of a [M×M] bit-dimension, wherein the message part includes N characteristic indicator groups of a [M/2×K] bit-dimension, respectively corresponding to the data pieces, and each including K indicators of a [M/2×1] bit-dimension and having the same value, and wherein a hamming distance between the indicators respectively corresponding to the data pieces stored in neighboring ones among the data cell regions is 1 or M/2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.