Etching method and etching device
US11443952B2 · kind B2 · utility
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1References
19Claims
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Assignee
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Key dates
| Filing date | May 11, 2018 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | May 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.