Selector transistor with metal replacement gate wordline
US11444123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jun 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical transistor structure having a metal gate wordline. The vertical transistor structure can include an epitaxially grown semiconductor column surrounded by a thin gate dielectric layer. A gate structure can surround the semiconductor column and the gate dielectric layer. The device can include first and second dielectric layers and an electrically conductive metal layer located between the first and second dielectric layers. The electrically conductive metal of the gate structure can be tungsten (W). In addition, a thin layer of Ti or TiN can be formed between the metal gate layer and the first and second dielectric layers and the gate dielectric layer. The metal gate layer can be formed with or without the use of a sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.