Patent · US Active

Spin orbit torque (SOT) memory devices and methods of fabrication

US11444237B2 · kind B2 · utility

0Cited by

11References

9Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Noriyuki Sato · Hillsboro, US
Tanay Gosavi · Portland, US
Gary Allen · Portland, US
Sasikanth Manipatruni · Ithaca, US
Kaan Oguz · Beaverton, US
Kevin P. O'Brien · Cincinnati, US
Christopher J. Wiegand · Portland, US
Angeline Smith · Hillsboro, US
Tofizur Rahman · Portland, US
Ian A. Young · Portland, US
Ben Buford · Hillsboro, US

Key dates

Filing date	Jun 29, 2018
Grant date	Sep 13, 2022
Priority date	—
Expiry date	Dec 11, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B61/22
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A spin orbit torque (SOT) memory device includes a SOT electrode having a spin orbit coupling material. The SOT electrode has a first sidewall and a second sidewall opposite to the first sidewall. The SOT memory device further includes a magnetic tunnel junction device on a portion of the SOT electrode. A first MTJ sidewall intersects the first SOT sidewall and a portion of the first MTJ sidewall and the SOT sidewall has a continuous first slope. The MTJ device has a second sidewall that does not extend beyond the second SOT sidewall and at least a portion of the second MTJ sidewall has a second slope.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.