Electronic devices comprising metal oxide materials and related methods and systems

US11444243B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Santanu Sarkar · Riverside, US
• Robert K. Grubbs · Boise, US
• Farrell M. Good · Meridian, US
• Adam William Saxler · Durham, US
• Andrea Gotti · Vaprio d'Adda, IT

Key dates

• Filing date: Oct 28, 2019
• Grant date: Sep 13, 2022
• Expiry date: Oct 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.