Farrell M. Good
32Patents
7h-index
38Co-inventors
69Inventor score
Filing activity: Sep 2, 1998 → Oct 21, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6537910B1 | Forming metal silicide resistant to subsequent thermal processing | Emerging Cross-Sectional Technologies | 148 | Expired |
| US7682924B2 | Methods of forming a plurality of capacitors | Electricity | 44 | Active |
| US8492278B2 | Method of forming a plurality of spaced features | Electricity | 16 | Active |
| US8980752B2 | Method of forming a plurality of spaced features | Electricity | 14 | Active |
| US10249819B2 | Methods of forming semiconductor structures including multi-portion liners | Electricity | 12 | Active |
| US6903425B2 | Silicon rich barrier layers for integrated circuit devices | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7071049B2 | Silicon rich barrier layers for integrated circuit devices | Emerging Cross-Sectional Technologies | 7 | Expired |
| US8288083B2 | Methods of forming patterned masks | Electricity | 7 | Active |
| US6210813A | Forming metal silicide resistant to subsequent thermal processing | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7618874B1 | Methods of forming capacitors | Emerging Cross-Sectional Technologies | 5 | Active |
| US7211479B2 | Silicon rich barrier layers for integrated circuit devices | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10665782B2 | Methods of forming semiconductor structures including multi-portion liners | Electricity | 2 | Active |
| US7405447B2 | Silicon rich barrier layers for integrated circuit devices | Emerging Cross-Sectional Technologies | 1 | Active |
| US8450164B2 | Methods of forming a plurality of capacitors | Electricity | 1 | Active |
| US11508573B2 | Plasma doping of gap fill materials | Electricity | 1 | Active |
| US11551926B2 | Methods of forming a microelectronic device, and related systems and additional methods | Electricity | 0 | Active |
| US12432984B2 | Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods | Electricity | 0 | Active |
| US11050020B2 | Methods of forming devices including multi-portion liners | Electricity | 0 | Active |
| US10879462B2 | Devices including multi-portion liners | Electricity | 0 | Active |
| US12040182B2 | Plasma doping of gap fill materials | Electricity | 0 | Active |
| US11069855B2 | Dielectric barrier at non-volatile memory tile edge | Electricity | 0 | Active |
| US12027363B2 | Methods of forming electronic devices comprising silicon carbide materials | Electricity | 0 | Active |
| US8476002B2 | Methods of forming patterned masks | Electricity | 0 | Active |
| US7550340B2 | Silicon rich barrier layers for integrated circuit devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US11444243B2 | Electronic devices comprising metal oxide materials and related methods and systems | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.