Methods and apparatus for reducing tungsten resistivity
US11447857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Sep 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a <110> crystalline orientation plane approximately parallel to a top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.