Deposition of low-κ films

US11447865B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shuaidi Zhang · Santa Clara, US
• Ning Li · White Plains, US
• Mihaela Balseanu · Sunnyvale, US
• Bhaskar Jyoti Bhuyan · San Jose, US
• Mark Saly · Santa Clara, US
• Thomas Knisley · Monroe, US

Key dates

• Filing date: Nov 17, 2020
• Grant date: Sep 20, 2022
• Expiry date: Nov 17, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45536
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.