Methods and apparatus for zone control of RF bias for stress uniformity
US11450511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Dec 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.