Methods of reducing particles in a physical vapor deposition (PVD) chamber
US11450514B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2021 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Mar 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a plurality of first deposition processes on a corresponding series of substrates disposed on a substrate support in the PVD chamber, wherein the PVD chamber includes a cover ring disposed about the substrate support and having a texturized outer surface, and wherein a silicon nitride (SiN) layer having a first thickness is deposited onto the texturized outer surface during each of the plurality of first deposition processes; and performing a second deposition process on the cover ring between subsets of the plurality of first deposition processes to deposit an amorphous silicon layer having a second thickness onto an underlying silicon nitride (SiN) layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.