Inventor · Palo Alto, CA, US

Shane Lavan

15Patents
2h-index
25Co-inventors
43Inventor score

Filing activity: Apr 13, 2020 → Jun 19, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US11600761B2 High critical temperature metal nitride layer with oxide or oxynitride seed layer Physics 3 Active
US11915918B2 Cleaning of sin with CCP plasma or RPS clean Electricity 2 Active
US11572618B2 Method and chamber for backside physical vapor deposition Electricity 1 Active
US11600477B2 Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process Electricity 1 Active
US11678589B2 Method of making high critical temperature metal nitride layer Physics 1 Active
US11469096B2 Method and chamber for backside physical vapor deposition Electricity 1 Active
US12142478B2 Method and chamber for backside physical vapor deposition Electricity 0 Active
US12183560B2 Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process Electricity 0 Active
US12185643B2 High critical temperature metal nitride layer with oxide or oxynitride seed layer Physics 0 Active
US11450514B1 Methods of reducing particles in a physical vapor deposition (PVD) chamber Electricity 0 Active
USD1072774S1 Target profile for a physical vapor deposition chamber target General 0 Active
US12052935B2 Method of making high critical temperature metal nitride layer Physics 0 Active
US12176205B2 Method and chamber for backside physical vapor deposition Electricity 0 Active
US12027354B2 Cleaning of SIN with CCP plasma or RPS clean Electricity 0 Active
US12096701B2 Method of making high critical temperature metal nitride layer Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.