Ion implant process for defect elimination in metal layer planarization
US11450565B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 19, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Oct 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.