One transistor and one ferroelectric capacitor memory cells in diagonal arrangements
US11450675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2018 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Jan 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described herein are one access transistor and one ferroelectric capacitor (1T-1FE-CAP) memory cells in diagonal arrangements, as well as corresponding methods and devices. When access transistors of memory cells are implemented as FinFETs, then, in a first diagonal arrangement, memory cells are arranged so that the BLs for the cells are diagonal with respect to the fins of the access transistors of the cells, while the WLs for the cells are perpendicular to the fins. In a second diagonal arrangement, memory cells are arranged so that the fins of the access transistors of the cells are diagonal with respect to the WLs for the cells, while the BLs for the cells are perpendicular to the WLs. Such diagonal arrangements may advantageously allow achieving high layout densities of 1T-1FE-CAP memory cells and may benefit from the re-use of front-end transistor process technology with relatively minor adaptations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.