Spacers for semiconductor devices including a backside power rails
US11456209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2020 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Nov 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a first source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line, the first conductive line defining a first side boundary of the air spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.