Structure and method to provide conductive field plate over gate structure

US11456364B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Ketankumar Harishbhai Tailor · Dresden, DE
• Peter Baars · Dresden, DE
• Ruchil Kumar Jain · Singapore, SG

Key dates

• Filing date: Sep 23, 2020
• Grant date: Sep 27, 2022
• Expiry date: Sep 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

Embodiments of the disclosure provide an integrated circuit device and related methods. The disclosure may provide a transistor device, including: a gate structure; a drain extension region extending laterally from partially under the gate structure to a drain region; and a gate spacer located over the drain extension region. A silicide-blocking layer is over and in contact with the gate spacer. The silicide-blocking layer has a first end over the gate structure and a second, opposing end over the drain extension region. The structure also provides a conductive field plate, including a conductive layer over and in contact with the silicide-blocking layer. A field plate contact is formed on the conductive field plate.