Patent · US Active

Adjusting a preprogram voltage based on use of a memory device

US11461035B2 · kind B2 · utility

2Cited by

0References

14Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Priya Venkataraman · Boise, US
Pitamber Shukla · Boise, US
Scott Anthony Stoller · Boise, US
Giuseppina Puzzilli · Boise, US
Niccolo' Righetti · Boise, US

Key dates

Filing date	Dec 18, 2020
Grant date	Oct 4, 2022
Priority date	—
Expiry date	Dec 18, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/3495
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method is described that includes determining a number of program and erase cycles associated with a block of pages of a memory device and determining a preprogram voltage based on the number of program and erase cycles to apply to the block of pages prior to an erase operation. The method further includes applying the preprogram voltage to the block of pages and performing an erase operation on the block of pages following application of the preprogram voltage to the block of pages.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.