Inventor · Boise, ID, US

Giuseppina Puzzilli

36Patents
5h-index
34Co-inventors
65Inventor score

Filing activity: Sep 10, 2009 → Oct 21, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8228735B2 Memory array having memory cells coupled between a programmable drain select gate and a non-programmable source select gate Physics 15 Active
US8619474B2 Data line management in a memory device Physics 11 Active
US10346088B2 Method and apparatus for per-deck erase verify and dynamic inhibit in 3d NAND Electricity 8 Active
US8514624B2 In-field block retiring Physics 7 Active
US8767467B2 In-field block retiring Physics 5 Active
US8369158B2 Erase operations and apparatus for a memory device Physics 2 Active
US11461035B2 Adjusting a preprogram voltage based on use of a memory device Physics 2 Active
US11360700B2 Partitions within snapshot memory for buffer and snapshot memory Physics 1 Active
US11301346B2 Separate trims for buffer and snapshot Emerging Cross-Sectional Technologies 1 Active
US11443812B2 Setting an initial erase voltage using feedback from previous operations Physics 1 Active
US11385819B2 Separate partition for buffer and snapshot memory Physics 1 Active
US11709616B2 Adjusting a preprogram voltage based on use of a memory device Physics 1 Active
US11288160B2 Threshold voltage distribution adjustment for buffer Physics 1 Active
US11899966B2 Implementing fault tolerant page stripes on low density memory systems Physics 0 Active
US11776629B2 Threshold voltage based on program/erase cycles Physics 0 Active
US11468949B2 Temperature-dependent operations in a memory device Physics 0 Active
US11189355B1 Read window based on program/erase cycles Physics 0 Active
US11430528B2 Determining a read voltage based on a change in a read window Physics 0 Active
US9490025B2 Methods of programming memory devices Physics 0 Active
US11694763B2 Read voltage calibration for copyback operation Physics 0 Active
US11449271B2 Implementing fault tolerant page stripes on low density memory systems Physics 0 Active
US11487436B2 Trims corresponding to logical unit quantity Physics 0 Active
US12026052B2 Partitioned memory having error detection capability Physics 0 Active
US11847335B2 Latent read disturb mitigation in memory devices Physics 0 Active
US11797216B2 Read calibration based on ranges of program/erase cycles Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.