Plasma processing method and plasma processing apparatus
US11462416B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Dec 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a plasma processing method for plasma etching an etching target film formed on a sample. The method includes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample and adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and a step of plasma etching the etching target film after the protective film forming step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.