Method for fabricating semiconductor device
US11462441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2021 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Jan 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of first forming a fin-shaped structure on a substrate, forming a dielectric layer surrounding the fin-shaped structure, performing an anneal process to transform the dielectric layer into a shallow trench isolation (STI), removing the fin-shaped structure to form a trench, and forming a stack structure in the trench. Preferably, the stack structure includes a first semiconductor layer on the fin-shaped structure and a second semiconductor layer on the first semiconductor layer and the first semiconductor layer and the second semiconductor layer include different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.