Switch device, storage apparatus, and memory system incorporating boron and carbon
US11462685B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2019 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | May 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.