Patent · US Active

Magnetoresistive sensor and fabrication method for a magnetoresistive sensor

US11467232B2 · kind B2 · utility

1Cited by

0References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Clemens Muehlenhoff · Munich, DE
Wolfgang Raberg · Sauerlach, DE
Dieter Suess · Herzogenburg, AT

Key dates

Filing date	Sep 21, 2020
Grant date	Oct 11, 2022
Priority date	—
Expiry date	Dec 9, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/123
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.