Ultrahigh selective nitride etch to form FinFET devices
US11469079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2017 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Aug 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.