Patent · US Active

RC IGBT

US11469317B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Frank Pfirsch · Birkenfeld, DE
Erich Griebl · Dorfen, DE
Viktoryia Lapidus · Munich, DE
Anton Mauder · Kolbermoor, DE
Christian Philipp Sandow · Haar, DE
Antonio Vellei · Villach, AT

Key dates

Filing date	Mar 16, 2021
Grant date	Oct 11, 2022
Priority date	—
Expiry date	Apr 8, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/117
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.