Doped polar layers and semiconductor device incorporating same

US11469327B2 · kind B2 · utility

Assignee

• Kepler Computing Inc. · US

Inventors

• Ramesh Ramamoorthy · Moraga, US
• Sasikanth Manipatruni · Ithaca, US
• Gaurav Thareja · Santa Clara, US

Key dates

• Filing date: Apr 7, 2020
• Grant date: Oct 11, 2022
• Expiry date: Apr 7, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor, which in turn comprises a polar layer comprising a crystalline base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen, wherein the dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor additionally comprises first and second crystalline conductive or semiconductive oxide electrodes on opposing sides of the polar layer, wherein the polar layer has a lattice constant that is matched within about 20% of a lattice constant of one or both of the first and second crystalline conductive or semiconductive oxide electrodes. The first crystalline conductive or semiconductive oxide electrode ser…