Patent assignee · US · COMPANY

Kepler Computing Inc.

268Patents
266Active
268Granted
72Portfolio score

Filing activity: Feb 27, 2019 → Dec 11, 2023

Most-cited patents

PatentTitleAreaCited byStatus
US10847201B2 High-density low voltage non-volatile differential memory bit-cell with shared plate line Physics 63 Active
US11482270B1 Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic Electricity 62 Active
US10944404B1 Low power ferroelectric based majority logic gate adder Electricity 53 Active
US11164976B2 Doped polar layers and semiconductor device incorporating same Electricity 53 Active
US11139270B2 Artificial intelligence processor with three-dimensional stacked memory Emerging Cross-Sectional Technologies 46 Active
US10998025B2 High-density low voltage non-volatile differential memory bit-cell with shared plate-line Physics 41 Active
US11423967B1 Stacked ferroelectric non-planar capacitors in a memory bit-cell Electricity 29 Active
US11165430B1 Majority logic gate based sequential circuit Electricity 26 Active
US11152343B1 3D integrated ultra high-bandwidth multi-stacked memory Emerging Cross-Sectional Technologies 25 Active
US11659714B1 Ferroelectric device film stacks with texturing layer, and method of forming such Electricity 24 Active
US11171115B2 Artificial intelligence processor with three-dimensional stacked memory Emerging Cross-Sectional Technologies 22 Active
US11694940B1 3D stack of accelerator die and multi-core processor die Emerging Cross-Sectional Technologies 21 Active
US11277137B1 Majority logic gate with non-linear input capacitors Electricity 19 Active
US10951213B1 Majority logic gate fabrication Electricity 17 Active
US11398570B2 Doped polar layers and semiconductor device incorporating same Electricity 12 Active
US11521667B1 Stacked ferroelectric planar capacitors in a memory bit-cell Electricity 11 Active
US11289608B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11411116B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11469327B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11355643B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11501813B1 Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell Electricity 11 Active
US11417768B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11296228B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11289607B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active
US11349031B2 Doped polar layers and semiconductor device incorporating same Electricity 11 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.