Nonvolatile memory device and method of operating a nonvolatile memory
US11475956B2 · kind B2 · utility
0Cited by
9References
20Claims
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Key dates
| Filing date | Apr 19, 2021 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Apr 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.