Chaehoon Kim
14Patents
2h-index
31Co-inventors
46Inventor score
Filing activity: Dec 3, 2015 → May 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10339989B2 | Page buffer, a memory device including the same and a read operation method thereof | Physics | 3 | Active |
| US10290343B2 | Memory devices that sample latch trip voltages prior to reading data into latches and methods of operating same | Physics | 2 | Active |
| US10546875B2 | Semiconductor memory device including a capacitor | Physics | 2 | Active |
| US9897650B2 | Integrated circuit and storage device including integrated circuit | Physics | 2 | Active |
| US10654025B2 | Amine-based carbon dioxide adsorbent resistant to oxygen and sulfur dioxide and method of preparing the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US10984873B2 | Memory device for stabilizing internal voltage and method of stabilizing internal voltage of the same | Electricity | 1 | Active |
| US12062395B2 | Nonvolatile memory device with configuration to apply adjustable voltage to pass transistor gate | Physics | 0 | Active |
| US12190964B2 | Nonvolatile memory device preventing overshoot of internal voltage and method of operating nonvolatile memory device | Physics | 0 | Active |
| US11798626B2 | Nonvolatile memory device and method of operating a nonvolatile memory | Electricity | 0 | Active |
| US12057391B2 | Semiconductor device and massive data storage system including the same | Electricity | 0 | Active |
| US12230330B2 | Nonvolatile memory device for increasing reliability of data detected through page buffer | Electricity | 0 | Active |
| US11027256B2 | Amine-based carbon dioxide adsorbent resistant to oxygen and sulfur dioxide and method of preparing the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US11670378B2 | Nonvolatile memory device for increasing reliability of data detected through page buffer | Electricity | 0 | Active |
| US11475956B2 | Nonvolatile memory device and method of operating a nonvolatile memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.