Etching method, plasma processing apparatus, and substrate processing system
US11476123B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Sep 9, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Sep 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.