Methods of forming electronic devices using materials removable at different temperatures
US11476268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jan 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/10
Abstract
A method comprising forming a stack precursor comprising alternating first materials and second materials, the first materials and the second materials exhibit different melting points. A portion of the alternating first materials and second materials is removed to form a pillar opening through the alternating first materials and second materials. A sacrificial material is formed in the pillar opening. The first materials are removed to form first spaces between the second materials, the first materials formulated to be in a liquid phase or in a gas phase at a first removal temperature. A conductive material is formed in the first spaces. The second materials are removed to form second spaces between the conductive materials, the second materials formulated to be in a liquid phase or in a gas phase at a second removal temperature. A dielectric material is formed in the second spaces. The sacrificial material is removed from the pillar opening and cell materials are formed in the pillar opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.