Semiconductor device
US11476355B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Mar 10, 2021 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Apr 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having IGBT, FWD and separate cell regions in a common semiconductor substrate, includes: a drift layer; a base layer; trench gate structures; an emitter region; a collector layer; a cathode layer; a first electrode; and a second electrode. The IGBT region having a first gate electrode in first and second IGBT trenches with a grid pattern is on the collector layer, and the FWD region with a second gate electrode in first and second FWD trenches with a grid pattern is on the cathode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.