Structures for reducing electron concentration and process for reducing electron concentration

US11476359B2 · kind B2 · utility

Assignee

• Wolfspeed, Inc. · US

Inventors

• Jia Guo · Apex, US
• Scott Sheppard · Chapel Hill, US
• Saptharishi Sriram · Cary, US

Key dates

• Filing date: Mar 18, 2019
• Grant date: Oct 18, 2022
• Expiry date: Mar 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A device includes a substrate; a buffer layer on the substrate; a barrier layer on the buffer layer, a source electrically coupled to the barrier layer; a gate electrically coupled to the barrier layer; and a drain electrically coupled to the barrier layer. The device further includes an electron concentration reduction structure arranged with at least one of the following: in the barrier layer and on the barrier layer. The electron concentration reduction structure is configured to at least one of the following: reduce electron concentration around the gate, reduce electron concentration around an edge of the gate, reduce electron concentration, increase power gain, increase efficiency, decouple the gate from the drain, decouple the gate from the source, and reduce capacitance.