Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication
US11476408B2 · kind B2 · utility
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Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Feb 5, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet, a fixed magnet and a tunnel barrier layer in between, where at least one of the fixed magnet or the free magnet includes two magnetic layers and a spacer layer comprising tungsten in between.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.