Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
US11476412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2018 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Oct 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/1936
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.