Patent · US Active

System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport

US11479875B2 · kind B2 · utility

0Cited by

5References

9Claims

0Family size

Assignee

SiCrystal GMBH · DE

Inventors

Erwin Schmitt · Großenseebach, DE
Michael Vogel · Nuremberg, DE

Key dates

Filing date	Jun 5, 2020
Grant date	Oct 25, 2022
Priority date	—
Expiry date	Jun 5, 2040

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/40
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.