Erwin Schmitt
5Patents
0h-index
6Co-inventors
34Inventor score
Filing activity: Feb 15, 2013 → Dec 20, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12195878B2 | SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same | Chemistry; Metallurgy | 0 | Active |
| US12157955B2 | Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport | Chemistry; Metallurgy | 0 | Active |
| US11479875B2 | System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport | Chemistry; Metallurgy | 0 | Active |
| US11560643B2 | System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport | Chemistry; Metallurgy | 0 | Active |
| US9376764B2 | Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.