Freezing a sacrificial material in forming a semiconductor
US11482409B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 19, 2021 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.