Method for depositing a gap-fill layer by plasma-assisted deposition
US11482412B2 · kind B2 · utility
2Cited by
2,211References
19Claims
0Family size
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Key dates
| Filing date | Jan 18, 2019 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Mar 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3382
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.