Methods of forming an abrasive slurry and methods for chemical- mechanical polishing
US11482450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2021 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Feb 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.