Chamber injector

US11492704B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shu-Kwan LAU · Sunnyvale, US
• Lit Ping LAM · Singapore, SG
• Preetham Rao · Bengaluru, IN
• Kartik Shah · Saratoga, US
• Ian Ong · Singapore, SG
• Nyi O. Myo · San Jose, US
• Brian H. Burrows · San Jose, US

Key dates

• Filing date: Aug 13, 2019
• Grant date: Nov 8, 2022
• Expiry date: Jun 30, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/481
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.