Deposition of low-stress boron-containing layers
US11495454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Aug 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02579
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about −500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.