Horizontal GAA nano-wire and nano-slab transistors
US11495500B2 · kind B2 · utility
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4References
19Claims
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Key dates
| Filing date | Oct 19, 2020 |
| Grant date | Nov 8, 2022 |
| Priority date | — |
| Expiry date | Apr 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a doped semiconductor material between source regions and drain regions of the device. The method includes doping semiconductor material layers between source regions and drain regions of an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.