Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film
US11500292B2 · kind B2 · utility
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5References
25Claims
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Key dates
| Filing date | Apr 16, 2020 |
| Grant date | Nov 15, 2022 |
| Priority date | — |
| Expiry date | Oct 26, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C2603/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.