Patent · US Active

Method for providing a semiconductor device with silicon filled gaps

US11501968B2 · kind B2 · utility

1Cited by

2,211References

16Claims

0Family size

Assignee

ASM IP Holding B.V. · NL

Inventors

Dieter Pierreux · Dilbeek, BE
Anna Trovato · Woluwe-Saint-Pierre - Sint-Pieters-Woluwe, BE
Kelly Houben · Sint-Bernard, BE
Steven R. A. Van Aerde · Tielt-Winge, BE
Bert Jongbloed · Oud-Heverlee, BE
Wilco Verweij · Nijkerk, NL

Key dates

Filing date	Nov 9, 2020
Grant date	Nov 15, 2022
Priority date	—
Expiry date	Nov 9, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02579
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method for filling a gap, comprising

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.